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- W3210471163 abstract "As feature sizes shrink and critical dimensions (CDs) decrease to nanometer scales in semiconductor plasma processing, feature profiles near the edge of the wafer become increasingly sensitive to the ion energy and angular distributions (IEADs). This is particularly the case in the etching of high aspect ratio (HAR) features using high bias power and high energy (a few $text{keV}$ ) ions. Slight non-uniformity in reactant production and ion transport persists down to the feature level. The focus ring (FR) is a component of plasma etching reactors that surround the wafer, with the goal maintaining uniform reactant fluxes and IEADs to the wafer. Subtleties in the design of the FR, such as dielectric constant, conductivity and wafer-FR gap can have a significant influence on maintaining critical dimension uniformity to the edge of the wafer." @default.
- W3210471163 created "2021-11-08" @default.
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- W3210471163 date "2018-06-24" @default.
- W3210471163 modified "2023-09-24" @default.
- W3210471163 title "Optimizing Uniformity in Plasma Etching of High Aspect Ratio Features by Engineering the Focus Ring" @default.
- W3210471163 doi "https://doi.org/10.1109/icops35962.2018.9575220" @default.
- W3210471163 hasPublicationYear "2018" @default.
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