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- W3210788822 abstract "为优化磷化铟高电子迁移率晶体管(InP HEMT)外延结构材料的抗电子辐照加固设计,本文采用气态源分子束外延法制备了系列InP HEMT外延结构材料，针对不同外延结构材料开展了1.5 MeV电子束辐照试验, 辐照注量为2?1015 cm-2，并测试了InP HEMT外延结构材料二维电子气（2DEG）辐照前后的电学特性, 获得了辐照前后不同外延结构InP HEMT材料二维电子气归一化浓度和电子迁移率随外延参数的变化规律，分析了InP HEMT二维电子气辐射损伤与外延结构参数（如Si-δ掺杂浓度、InGaAs 沟道厚度和沟道In组分以及隔离层厚度等结构参数）依赖的关系，结果显示: Si-δ掺杂浓度越大，隔离层厚度较薄，InGaAs 沟道厚度较大，沟道In组分较低的InP HEMT外延结构二维电子气辐射损伤相对较低，具有更强的抗辐照能力." @default.
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- W3210788822 date "2021-01-01" @default.
- W3210788822 modified "2023-09-25" @default.
- W3210788822 title "Structure parameters design of InP HEMT epitaxial materials to improve the radiation-hardened ability" @default.
- W3210788822 doi "https://doi.org/10.7498/aps.70.20211265" @default.
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