FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3210902013> ?p ?o ?g. }

• W3210902013 abstract "This paper describes the fabrication of Ge1−ySny layers with 2%–13% Sn, utilizing a unique method that combines high-order Ge4H10 and Ge5H12 hydrides and gas source molecular epitaxy techniques. The latter operate at very low working pressures of 10−6–10−7 Torr leading to molecular flow regime conditions, promoting layer-by-layer epitaxy of crystalline materials at ultralow-temperatures (250–160 °C) that cannot be achieved by conventional thermal CVD. In both cases, a “direct injection” approach is employed, using the pure vapor of Ge4H10 and Ge5H12 as the source of the Ge flux, which is then reacted on the substrate surface with SnD4 in the absence of gaseous carriers. Ge4H10 reactions were conducted at 215–190 °C, producing 6%–12% Sn samples. These were grown on both conductive, resistive, single-side, and double-side polished Si(100) with n-type Ge1−xSix buffer layers (x = 2%–3%) to explore conditions and substrate formats that facilitate back-side illumination, enabling transparency and enhanced responsivity at 1550 nm in prototype p-i-n devices. Exploratory reactions of Ge5H12 with SnD4 produced Ge1−ySny with 2%–13% Sn at 250–160 °C for the first time. All samples were characterized by XRD, RBS, IR-ellipsometry, AFM, and TEM to investigate the structure, composition, strain state, and morphology. The samples grow partially relaxed (T &gt; 180 °C) and their compressive strains gradually diminish in situ with increasing film thickness (up to 700 nm) without epitaxial breakdown and Sn segregation. Residual strains are further reduced by RTA processing. The experiments described here demonstrate the practicality of our chemistry-based method as an alternative to thermal CVD for the fabrication of high crystal quality samples on larger area wafers for potential applications in IR devices." @default.
• W3210902013 created "2021-11-08" @default.
• W3210902013 creator A5021339710 @default.
• W3210902013 creator A5022255073 @default.
• W3210902013 creator A5037771693 @default.
• W3210902013 creator A5050312804 @default.
• W3210902013 creator A5087532319 @default.
• W3210902013 date "2021-11-02" @default.
• W3210902013 modified "2023-10-18" @default.
• W3210902013 title "Gas source molecular epitaxy of Ge1−ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides" @default.
• W3210902013 cites W1549950887 @default.
• W3210902013 cites W1553325766 @default.
• W3210902013 cites W1801824212 @default.
• W3210902013 cites W1973999121 @default.
• W3210902013 cites W1980988966 @default.
• W3210902013 cites W1986098028 @default.
• W3210902013 cites W1989763237 @default.
• W3210902013 cites W1996902682 @default.
• W3210902013 cites W2027560109 @default.
• W3210902013 cites W2051873877 @default.
• W3210902013 cites W2059813681 @default.
• W3210902013 cites W2061759252 @default.
• W3210902013 cites W2073926042 @default.
• W3210902013 cites W2083818562 @default.
• W3210902013 cites W2094024185 @default.
• W3210902013 cites W2281423532 @default.
• W3210902013 cites W2318304067 @default.
• W3210902013 cites W2331200634 @default.
• W3210902013 cites W2334563742 @default.
• W3210902013 cites W2466388231 @default.
• W3210902013 cites W2569731556 @default.
• W3210902013 cites W2910175099 @default.
• W3210902013 cites W2981713134 @default.
• W3210902013 cites W2985410365 @default.
• W3210902013 cites W3012497400 @default.
• W3210902013 cites W3102425719 @default.
• W3210902013 cites W3190410347 @default.
• W3210902013 doi "https://doi.org/10.1116/6.0001253" @default.
• W3210902013 hasPublicationYear "2021" @default.
• W3210902013 type Work @default.
• W3210902013 sameAs 3210902013 @default.
• W3210902013 citedByCount "3" @default.
• W3210902013 countsByYear W32109020132022 @default.
• W3210902013 countsByYear W32109020132023 @default.
• W3210902013 crossrefType "journal-article" @default.
• W3210902013 hasAuthorship W3210902013A5021339710 @default.
• W3210902013 hasAuthorship W3210902013A5022255073 @default.
• W3210902013 hasAuthorship W3210902013A5037771693 @default.
• W3210902013 hasAuthorship W3210902013A5050312804 @default.
• W3210902013 hasAuthorship W3210902013A5087532319 @default.
• W3210902013 hasBestOaLocation W32109020131 @default.
• W3210902013 hasConcept C110738630 @default.
• W3210902013 hasConcept C111368507 @default.
• W3210902013 hasConcept C113196181 @default.
• W3210902013 hasConcept C127313418 @default.
• W3210902013 hasConcept C136525101 @default.
• W3210902013 hasConcept C142724271 @default.
• W3210902013 hasConcept C171250308 @default.
• W3210902013 hasConcept C18293161 @default.
• W3210902013 hasConcept C185592680 @default.
• W3210902013 hasConcept C19067145 @default.
• W3210902013 hasConcept C192562407 @default.
• W3210902013 hasConcept C204787440 @default.
• W3210902013 hasConcept C2777289219 @default.
• W3210902013 hasConcept C2779227376 @default.
• W3210902013 hasConcept C3792809 @default.
• W3210902013 hasConcept C43617362 @default.
• W3210902013 hasConcept C49040817 @default.
• W3210902013 hasConcept C71924100 @default.
• W3210902013 hasConceptScore W3210902013C110738630 @default.
• W3210902013 hasConceptScore W3210902013C111368507 @default.
• W3210902013 hasConceptScore W3210902013C113196181 @default.
• W3210902013 hasConceptScore W3210902013C127313418 @default.
• W3210902013 hasConceptScore W3210902013C136525101 @default.
• W3210902013 hasConceptScore W3210902013C142724271 @default.
• W3210902013 hasConceptScore W3210902013C171250308 @default.
• W3210902013 hasConceptScore W3210902013C18293161 @default.
• W3210902013 hasConceptScore W3210902013C185592680 @default.
• W3210902013 hasConceptScore W3210902013C19067145 @default.
• W3210902013 hasConceptScore W3210902013C192562407 @default.
• W3210902013 hasConceptScore W3210902013C204787440 @default.
• W3210902013 hasConceptScore W3210902013C2777289219 @default.
• W3210902013 hasConceptScore W3210902013C2779227376 @default.
• W3210902013 hasConceptScore W3210902013C3792809 @default.
• W3210902013 hasConceptScore W3210902013C43617362 @default.
• W3210902013 hasConceptScore W3210902013C49040817 @default.
• W3210902013 hasConceptScore W3210902013C71924100 @default.
• W3210902013 hasFunder F4320338279 @default.
• W3210902013 hasIssue "6" @default.
• W3210902013 hasLocation W32109020131 @default.
• W3210902013 hasOpenAccess W3210902013 @default.
• W3210902013 hasPrimaryLocation W32109020131 @default.
• W3210902013 hasRelatedWork W1970801993 @default.
• W3210902013 hasRelatedWork W2003720058 @default.
• W3210902013 hasRelatedWork W2020765697 @default.
• W3210902013 hasRelatedWork W2055754760 @default.
• W3210902013 hasRelatedWork W2061375383 @default.
• W3210902013 hasRelatedWork W2061713127 @default.
• W3210902013 hasRelatedWork W2091934482 @default.
• W3210902013 hasRelatedWork W2153782077 @default.

• next