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- W3211193584 endingPage "108675" @default.
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- W3211193584 abstract "Thin nitrogen doped layers with ~1 ppm NV center ensembles were created by the hydrogen implantation of type Ib or hot nitrogen implantation in the high purity type IIa and IIb high pressure high temperature-grown (HPHT) diamond and followed HPHT treatment up to 1500 °C at 7 GPa. The dephasing time T2* = 0.4–0.9 μs was obtained even for the implanted nitrogen content of ~100 ppm. The data evidence the absence of other spin active defects besides the implanted nitrogen atoms in neutral states, determined this decoherence." @default.
- W3211193584 created "2021-11-08" @default.
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- W3211193584 date "2021-12-01" @default.
- W3211193584 modified "2023-09-26" @default.
- W3211193584 title "Long dephasing time of NV center spins in diamond layers formed by hot ion implantation and high pressure high temperature annealing" @default.
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- W3211193584 doi "https://doi.org/10.1016/j.diamond.2021.108675" @default.
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