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• W3211477625 abstract "Pending the availability of actinic inspection tools, optical inspection tools with 193 nm DUVillumination wavelength are currently used to inspect EUV masks and EUVL-exposed wafers.Due to strong optical absorption, DUV photons can penetrate only a few surface layers of EUVmasks, making them sub-optimal for detecting hidden defects embedded within the sub-layers ofthe mask, the so-called phase defects. Although these phase defects may not be detected byoptical inspection tools, they may print on the wafer. Conversely, false and nuisance defectswhich may not print on the wafer may be detected by optical inspection tools, and by so doing,degrade the inspection sensitivity of the tool to real and critical defects. This paper discussesapproaches to optimizing the optical inspection sensitivity of EUV masks, with a view toovercoming some of the absorption limitations of the inspection wavelength and also with a viewto enhancing the imaging contrast of the reflected light between the low reflective absorber/antireflectioncoating stack and the moderately reflective mirror surface of Mo/Si bilayers, cappedwith a thin Ru layer, and which serves to protect the mirror surface from damage andcontamination during mask fabrication and wafer printing processes. The effects of maskabsorber/ARC stack thickness on optical inspection contrast are simulated using rigorouscoupled wave analysis (RCWA), and compared to experimental results. EUV masks with thinabsorber/ARC stacks are observed to have higher inspection contrast, up to 15 % higher thantheir thicker counterparts, especially as the feature pitch gets smaller. Blank defect inspectionperformance of tools such as the Siemens DFX40 tool and KLA 617 Teron tool equipped withPhasur module are compared, and correlated with patterned mask inspection data generated fromKLA 617 Teron tool. Patterned mask defect sensitivities to the tune of 40 nm and 90 nm wereobtained on thin and thick absorber/ARC stacks, respectively. The defect location accuracy ofthe Teron 617 tool is better than 250 nm (3σ), while the alignment repeatability of the Teron 617on the fiducials is better than 60 nm (3σ). Printability of mask blank and patterned mask defectson exposed wafers in terms of what and where the defects print, are also presented. Four maskswith different absorber and antireflection coating thicknesses, some with substrate and absorber programmed defects of different types and sizes, were fabricated and used to expose resistcoatedSiN substrate wafers on full field ASML EUV scanners." @default.
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• W3211477625 date "2012-01-01" @default.
• W3211477625 modified "2023-09-27" @default.
• W3211477625 title "Towards the Optical Inspection Sensitivity Optimization of EUV Masks and EUVL-Exposed Wafers" @default.
• W3211477625 hasPublicationYear "2012" @default.
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