Matches in SemOpenAlex for { <https://semopenalex.org/work/W3211587445> ?p ?o ?g. }
Showing items 1 to 91 of
91
with 100 items per page.
- W3211587445 endingPage "6" @default.
- W3211587445 startingPage "1" @default.
- W3211587445 abstract "A 3.3-kV class third-generation silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with an optimized cell structure consisting of a Schottky barrier diode (SBD) embedded in a SiC MOSFET is developed. The developed SiC MOSFET not only suppresses bipolar operation but also achieves 19% lower on-resistance compared with conventional SiC MOSFETs. We also develop a lowinductance package named iXPLV, whose stray inductance is reduced by 40% compared with conventional modules. We measure the switching losses of the developed MOSFET assembled in iXPLV and compare it with the switching loss of a silicon (Si) insulated gate bipolar transistor (IGBT) assembled in a conventional module. The switching loss of the developed module is 60% lower than the conventional Si IGBT with Si PiN diode and 43% lower than the Si IGBT with SiC SBD. We also estimate the effect of these loss reductions on the cooling unit volume, and the developed module is found to achieve a heatsink volume reduction of 40% compared with the module with a Si IGBT with Si PiN diode and 59% compared with the module with a Si IGBT with SiC SBD." @default.
- W3211587445 created "2021-11-22" @default.
- W3211587445 creator A5002521301 @default.
- W3211587445 creator A5002814542 @default.
- W3211587445 creator A5002937982 @default.
- W3211587445 creator A5029649125 @default.
- W3211587445 creator A5037392716 @default.
- W3211587445 creator A5038184174 @default.
- W3211587445 creator A5046029089 @default.
- W3211587445 creator A5058931620 @default.
- W3211587445 creator A5060292678 @default.
- W3211587445 creator A5089108757 @default.
- W3211587445 date "2021-05-03" @default.
- W3211587445 modified "2023-09-27" @default.
- W3211587445 title "3.3 kV All SiC MOSFET Module with Schottky Barrier Diode Embedded SiC MOSFET" @default.
- W3211587445 hasPublicationYear "2021" @default.
- W3211587445 type Work @default.
- W3211587445 sameAs 3211587445 @default.
- W3211587445 citedByCount "0" @default.
- W3211587445 crossrefType "journal-article" @default.
- W3211587445 hasAuthorship W3211587445A5002521301 @default.
- W3211587445 hasAuthorship W3211587445A5002814542 @default.
- W3211587445 hasAuthorship W3211587445A5002937982 @default.
- W3211587445 hasAuthorship W3211587445A5029649125 @default.
- W3211587445 hasAuthorship W3211587445A5037392716 @default.
- W3211587445 hasAuthorship W3211587445A5038184174 @default.
- W3211587445 hasAuthorship W3211587445A5046029089 @default.
- W3211587445 hasAuthorship W3211587445A5058931620 @default.
- W3211587445 hasAuthorship W3211587445A5060292678 @default.
- W3211587445 hasAuthorship W3211587445A5089108757 @default.
- W3211587445 hasConcept C119599485 @default.
- W3211587445 hasConcept C127413603 @default.
- W3211587445 hasConcept C129014197 @default.
- W3211587445 hasConcept C159985019 @default.
- W3211587445 hasConcept C16115445 @default.
- W3211587445 hasConcept C165801399 @default.
- W3211587445 hasConcept C172385210 @default.
- W3211587445 hasConcept C192562407 @default.
- W3211587445 hasConcept C205200001 @default.
- W3211587445 hasConcept C23061349 @default.
- W3211587445 hasConcept C2778413303 @default.
- W3211587445 hasConcept C2780722187 @default.
- W3211587445 hasConcept C28285623 @default.
- W3211587445 hasConcept C49040817 @default.
- W3211587445 hasConcept C52236655 @default.
- W3211587445 hasConcept C78434282 @default.
- W3211587445 hasConceptScore W3211587445C119599485 @default.
- W3211587445 hasConceptScore W3211587445C127413603 @default.
- W3211587445 hasConceptScore W3211587445C129014197 @default.
- W3211587445 hasConceptScore W3211587445C159985019 @default.
- W3211587445 hasConceptScore W3211587445C16115445 @default.
- W3211587445 hasConceptScore W3211587445C165801399 @default.
- W3211587445 hasConceptScore W3211587445C172385210 @default.
- W3211587445 hasConceptScore W3211587445C192562407 @default.
- W3211587445 hasConceptScore W3211587445C205200001 @default.
- W3211587445 hasConceptScore W3211587445C23061349 @default.
- W3211587445 hasConceptScore W3211587445C2778413303 @default.
- W3211587445 hasConceptScore W3211587445C2780722187 @default.
- W3211587445 hasConceptScore W3211587445C28285623 @default.
- W3211587445 hasConceptScore W3211587445C49040817 @default.
- W3211587445 hasConceptScore W3211587445C52236655 @default.
- W3211587445 hasConceptScore W3211587445C78434282 @default.
- W3211587445 hasLocation W32115874451 @default.
- W3211587445 hasOpenAccess W3211587445 @default.
- W3211587445 hasPrimaryLocation W32115874451 @default.
- W3211587445 hasRelatedWork W1902744722 @default.
- W3211587445 hasRelatedWork W1935062327 @default.
- W3211587445 hasRelatedWork W2158788511 @default.
- W3211587445 hasRelatedWork W2248671946 @default.
- W3211587445 hasRelatedWork W2480114432 @default.
- W3211587445 hasRelatedWork W2589023056 @default.
- W3211587445 hasRelatedWork W2606153997 @default.
- W3211587445 hasRelatedWork W2768661976 @default.
- W3211587445 hasRelatedWork W2799609973 @default.
- W3211587445 hasRelatedWork W2808901369 @default.
- W3211587445 hasRelatedWork W2875668967 @default.
- W3211587445 hasRelatedWork W2946456406 @default.
- W3211587445 hasRelatedWork W2967910613 @default.
- W3211587445 hasRelatedWork W2979653605 @default.
- W3211587445 hasRelatedWork W2980947098 @default.
- W3211587445 hasRelatedWork W3096424843 @default.
- W3211587445 hasRelatedWork W3120672425 @default.
- W3211587445 hasRelatedWork W3154500398 @default.
- W3211587445 hasRelatedWork W3179454270 @default.
- W3211587445 hasRelatedWork W2933957804 @default.
- W3211587445 isParatext "false" @default.
- W3211587445 isRetracted "false" @default.
- W3211587445 magId "3211587445" @default.
- W3211587445 workType "article" @default.