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• W3211836802 abstract "The III–V/Si hybrid Metal-Oxide-Semiconductor (MOS) optical modulator is promising for high-efficiency, low-energy and high-speed optical modulation. As of now, all the III–V/Si hybrid MOS optical modulators demonstrated were driven by the RC-limited lumped electrodes. In order to break the RC limitation posed by the driving scheme, we designed a traveling-wave III–V/Si hybrid MOS optical modulator. Based on the equivalent circuit model developed, the traveling-wave electrode geometry, doping concentration and equivalent oxide thickness were optimized numerically to achieve the velocity and impedance matching for high modulation bandwidth with a low <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex-math notation=LaTeX>$V_{pp}$</tex-math></inline-formula> of 2 V. High modulation bandwidths of 75 GHz and 102 GHz were predicted for carrier-accumulation mode and carrier depletion mode, respectively. The expected high modulation bandwidth makes the III–V/Si hybrid MOS optical modulator more attractive in the high-data-rate optical transmission." @default.
• W3211836802 created "2021-11-22" @default.
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• W3211836802 date "2022-05-01" @default.
• W3211836802 modified "2023-09-26" @default.
• W3211836802 title "Design of a High-Bandwidth Traveling-Wave III–V/Si Hybrid MOS Optical Modulator" @default.
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• W3211836802 doi "https://doi.org/10.1109/jstqe.2021.3126314" @default.
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