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• W3212151949 abstract "Different functions can be directly realized by silicon (Si) in integrated electronic circuits. Although Si and silicon nitride (Si3N4) photonics have shown great potential in integrated optoelectronic devices, different functions, such as light generation, transparency for guided light, and light detection, cannot be simultaneously achieved only by Si or Si3N4. Second-order nonlinearity is another optical property they do not possess due to their centrosymmetric properties. Several kinds of 2D materials emerged recently and were transferred to specified photonic devices aimed at improving their nonlinear performance. However, the transferring methods are time-consuming, unable to achieve large-scale production, and will inevitably cause materials damage and introduce impurities at the interface. Herein, we demonstrate the direct growth of large-area homogeneous monolayer WS2via a physical vapor deposition method onto Si3N4 waveguides. The WS2 growth can be controlled mainly along the Si3N4 waveguides and the waveguides show an obvious enhancement of second-harmonic generation with the elongated WS2 coverage. The direct growth of WS2 endows Si3N4 integrated photonics with new nonlinear optical properties. As an alternative method of transferring 2D materials, the method we present here is compatible with large-scale integrated photonic fabrication, which lays the foundation for on-chip integrated optical fabrication and applications." @default.
• W3212151949 created "2021-11-22" @default.
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• W3212151949 date "2022-01-01" @default.
• W3212151949 modified "2023-10-16" @default.
• W3212151949 title "Silicon nitride waveguides with directly grown WS₂for efficient second-harmonic generation" @default.
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• W3212151949 doi "https://doi.org/10.1039/d1nr06216f" @default.
• W3212151949 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/34851343" @default.
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