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• W3212345260 abstract "Abstract High-quality AlN with uniform in-plane strain has been attempted with preset strain modulation on nano-patterned AlN templates (NPATs). It is found that this strain preset frame can effectively improve both the tilt and twist features of AlN on NPATs, further greatly decreasing threading dislocation density. More importantly, the AlN epilayer after completing coalescence can maintain the in-plane uniform compressive strain. Adopting AlN templates achieved in this scheme, the chip-on-wafer light output power (LOP) of AlGaN light-emitting diode (LED) reaches 10.2 mW at 100 mA with single emission peak at 280 nm, which increases by 22.3% than the LOP of LED device without adopting this strain preset frame." @default.
• W3212345260 created "2021-11-22" @default.
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• W3212345260 date "2021-12-01" @default.
• W3212345260 modified "2023-10-06" @default.
• W3212345260 title "High quality AlN with uniform in-plane strain on nano-patterned AlN templates achieved by preset strain modulation" @default.
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• W3212345260 doi "https://doi.org/10.35848/1347-4065/ac3ac4" @default.
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