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• W3212375229 abstract "The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-heating effect and surface temperature increase phenomenon are observed on novel top-gate b{eta}-Ga2O3 on insulator field-effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO2/Si substrate, the temperature rise above room temperature of b{eta}-Ga2O3 on the insulator field-effect transistor can be reduced by a factor of 3 and thereby the self-heating effect is significantly reduced. Both thermoreflectance characterization and simulation verify that the thermal resistance on the sapphire substrate is less than 1/3 of that on the SiO2/Si substrate. Therefore, maximum drain current density of 535 mA/mm is achieved on the sapphire substrate, which is 70% higher than that on the SiO2/Si substrate due to reduced self-heating. Integration of b{eta}-Ga2O3 channel on a higher thermal conductivity substrate opens a new route to address the low thermal conductivity issue of b{eta}-Ga2O3 for power electronics applications." @default.
• W3212375229 created "2021-11-22" @default.
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• W3212375229 date "2017-11-09" @default.
• W3212375229 modified "2023-10-16" @default.
• W3212375229 title "Thermodynamic Studies of β-Ga₂O₃ Nanomembrane Field-Effect Transistors on a Sapphire Substrate" @default.
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• W3212375229 doi "https://doi.org/10.1021/acsomega.7b01313" @default.
• W3212375229 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6645553" @default.
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• W3212375229 hasPublicationYear "2017" @default.
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