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• W3212884668 endingPage "100078" @default.
• W3212884668 startingPage "100078" @default.
• W3212884668 abstract "Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. Via a simple solvent vapor annealing procedure, the giant surfactant comprised of an oligomeric silsesquioxane (DPOSS) and polystyrene (PS) tail ( i.e. , DPOSS-PS) has been precisely self-assembled into perpendicularly oriented lamellae structures. A follow-up thermal annealing further significantly promotes the long-range ordering, giving rise to highly oriented and defect-free sub-10 nm line patterns (up to areas of several µm 2 ). The solvent evaporation and thermal annealing process, together with the strong segregation strength ( χN ) of DPOSS-PS, play crucial roles in the self-orientation and width-reduction of the line patterns. This simple processing of the easy-accessed giant surfactants results in a facile and more economic approach for large-scale nano-sized line grating fabrication." @default.
• W3212884668 created "2021-11-22" @default.
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• W3212884668 date "2021-12-01" @default.
• W3212884668 modified "2023-10-01" @default.
• W3212884668 title "Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing" @default.
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• W3212884668 doi "https://doi.org/10.1016/j.giant.2021.100078" @default.
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