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- W3212886488 abstract "The nature of the low-frequency 1/f noise in electronic materials and devices is one of the oldest unsolved physical problems (f is the frequency). The fundamental question of the noise source-fluctuations in the mobility vs. number of charge carriers-is still debated. While there are several pieces of evidence to prove that the 1/f noise in semiconductors is due to the fluctuations in the number of the charge carriers, there is no direct evidence of the mobility fluctuations as the source of 1/f noise in any material. Herein, we measured noise in an h-BN encapsulated graphene transistor under the conditions of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately μ0B ≅ 1 (μ0 is the electron mobility). This observation proves unambiguously that mobility fluctuations are the dominant mechanism of electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device." @default.
- W3212886488 created "2021-11-22" @default.
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- W3212886488 date "2022-01-01" @default.
- W3212886488 modified "2023-10-18" @default.
- W3212886488 title "Nature of the 1/<i>f</i> noise in graphene—direct evidence for the mobility fluctuation mechanism" @default.
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- W3212886488 doi "https://doi.org/10.1039/d2nr00207h" @default.
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