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• W3213125048 abstract "The open-circuit voltage ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>oc</sub> ) of CdTe-based photovoltaics may be limited by carrier recombination at interfaces (front or back) or in the absorber layer. Reduction in recombination of a given dominant mechanisms can lead to improved device performance if the remaining mechanisms turn <sc xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</small> in a narrow bias range just below the open circuit voltage. In this article, we demonstrate enhanced performance by incorporating solution-processed Cu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> to form a back-buffer layer in CdSe/CdTe devices. Outstanding minority carrier lifetimes of 656 and 4.2 ns were measured with glass side and film side illumination for device stacks processed with Cu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> . Devices demonstrated efficiencies of up to 17.4% with <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>oc</sub> of 859 mV, FF of 75.6% and <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>J</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sc</sub> of 26.9 mAcm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> while the efficiency of the reference device without the back-buffer layer was 16.5% with <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>oc</sub> of 839 mV, FF of 70.6%, and <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>J</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sc</sub> of 27.9 mAcm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> ." @default.
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• W3213125048 date "2022-01-01" @default.
• W3213125048 modified "2023-10-13" @default.
• W3213125048 title "Improving CdSeTe Devices With a Back Buffer Layer of Cu_xAlO_y" @default.
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• W3213125048 doi "https://doi.org/10.1109/jphotov.2021.3120506" @default.
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