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• W3213407838 abstract "Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2 . Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2 ." @default.
• W3213407838 created "2021-11-22" @default.
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• W3213407838 date "2021-11-20" @default.
• W3213407838 modified "2023-10-18" @default.
• W3213407838 title "Bandgap Shrinkage and Charge Transfer in 2D Layered SnS ₂ Doped with V for Photocatalytic Efficiency Improvement" @default.
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• W3213407838 doi "https://doi.org/10.1002/smll.202105076" @default.
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• W3213407838 hasPublicationYear "2021" @default.
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