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- W3213660107 abstract "Abstract Polysilicon contact structures with ultra‐thin atomic layer deposited (ALD) oxide and nitride interlayers based on SiO x , SiN x , AlO x , AlN x , and TiO x either as part of an interlayer stack when applied on top of a conventional thermally‐grown SiO x or as a single interlayer were investigated. ALD SiO x single interlayers provided a very good passivation quality with high implied open‐circuit voltage and low‐specific contact resistivity when an optimal thickness and annealing temperature was applied. Also, ALD SiN x single interlayers showed a promising passivation quality, while AlO x and AlN x interlayers only allowed for a moderate and TiO x interlayers exhibited a very poor passivation quality. ALD SiO x interlayers on planar and textured silicon solar cells with poly‐Si(p) hole‐selective contacts and poly‐Si(n) electron‐selective contacts enabled a conversion efficiency of almost 21% as a proof‐of‐concept. These results are comparable with silicon solar cells with conventional thermally‐grown SiO x , showing that ALD SiO x interlayers are an alternative to conventional thermally‐grown SiO x in polysilicon contacts structures." @default.
- W3213660107 created "2021-11-22" @default.
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- W3213660107 date "2021-11-08" @default.
- W3213660107 modified "2023-09-30" @default.
- W3213660107 title "Polysilicon contact structures for silicon solar cells using atomic layer deposited oxides and nitrides as ultra‐thin dielectric interlayers" @default.
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- W3213660107 doi "https://doi.org/10.1002/pip.3485" @default.
- W3213660107 hasPublicationYear "2021" @default.
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