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- W3214556680 abstract "Abstract The present work intends to discover the influences of 60 Co gamma ( γ ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency." @default.
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- W3214556680 date "2021-11-15" @default.
- W3214556680 modified "2023-09-25" @default.
- W3214556680 title "Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation" @default.
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- W3214556680 doi "https://doi.org/10.1088/1402-4896/ac369f" @default.
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