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- W3214860576 abstract "In this work, the effect of γ-irradiation on the adhesion properties of FP9120 diazoquinone–novolac photoresist films deposited on single-crystal silicon wafers by centrifugation was studied using an indentation method. It was found that γ-irradiation led to a decrease in the specific peeling energy G of photoresist films on silicon. In this case, the IR spectra of the photoresist exhibited a decrease in the intensity of vibration bands due to the Si–O–C moiety, which is responsible for adhesion to silicon, in the course of γ-irradiation. The observed experimental results were explained taking into account the radiation-chemical and relaxation processes occurring both at the photoresist/silicon interface and in the bulk of the polymer film." @default.
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- W3214860576 date "2021-11-01" @default.
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- W3214860576 title "Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon" @default.
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- W3214860576 doi "https://doi.org/10.1134/s0018143921060151" @default.
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