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- W3214948072 abstract "An examination is made of the problem of modeling GaAs MESFETs for calculations of intermodulation and spurious responses. It is shown that an adequate model must express not only the absolute I-V characteristics of the device, but also the derivatives of these characteristics. A large-signal FET model that models these derivatives more realistically than do previous models is proposed. >" @default.
- W3214948072 created "2021-12-06" @default.
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- W3214948072 date "2002-12-04" @default.
- W3214948072 modified "2023-09-26" @default.
- W3214948072 title "Modeling MESFETs for intermodulation analysis of mixers and amplifiers" @default.
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- W3214948072 doi "https://doi.org/10.1109/mwsym.1990.99815" @default.
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