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- W3215203485 abstract "Information technology demands high-speed optoelectronic devices, but going beyond the one terahertz (THz) barrier is challenging due to the difficulties associated with generating, detecting, and processing high-frequency signals. Here, we show that femtosecond-laser-driven phonons can be utilized to coherently manipulate the excitonic properties of semiconductors at THz frequencies. The precise control of the pump and subsequent time-delayed broadband probe pulses enables the simultaneous generation and detection processes of both periodic lattice vibrations and their couplings with electronic states. Combining ultralow frequency Raman spectroscopy with first-principles calculations, we identify the unique phonon mode-selective and probe-energy dependent features of electron-phonon interactions in layered PdSe2. Two distinctive types of coherent phonon excitations could couple preferentially to different types of electronic excitations: the intralayer (4.3 THz) mode to carriers and the interlayer (0.35 THz) mode to excitons. This work provides new insights to understand the excited-state phonon interactions of 2D materials, and to achieve future applications of optoelectronic devices operating at THz frequencies." @default.
- W3215203485 created "2021-12-06" @default.
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- W3215203485 date "2021-11-26" @default.
- W3215203485 modified "2023-10-14" @default.
- W3215203485 title "Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies" @default.
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- W3215203485 doi "https://doi.org/10.1038/s41699-021-00268-3" @default.
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