Matches in SemOpenAlex for { <https://semopenalex.org/work/W3215281310> ?p ?o ?g. }
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- W3215281310 abstract "A GaN complementary field-effect transistor (FET) inverter monolithically integrated with power gate-injection high-electron-mobility transistors (HEMTs) was realized on a Si substrate. The GaN p-channel and n-channel logic devices and power devices were fabricated based on a p-GaN/AlGaN/GaN epi-structure. Through optimization of epi-layer thickness and doping, excellent low-level noise margin (NM<sub>L</sub>) of 1.47 V and high-level noise margin (NM<sub>H</sub>) of 0.98 V were achieved at a supply voltage <inline-formula> <tex-math notation=LaTeX>${V}_{text {DD}}$ </tex-math></inline-formula> of 3 V at room temperature. A maximum current density (<inline-formula> <tex-math notation=LaTeX>${I}_{text {D,max}}$ </tex-math></inline-formula>) of 0.36 mA/mm/220 mA/mm at <inline-formula> <tex-math notation=LaTeX>${V}_{text {DS}}$ </tex-math></inline-formula> of −3 V/3 V and a threshold voltage <inline-formula> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> of −2.0 V/+2.3 V were achieved in the p-channel and n-channel FETs, respectively. A propagation delay of an inverter stage <inline-formula> <tex-math notation=LaTeX>$tau _{text {pd}}$ </tex-math></inline-formula> in a ring oscillator was measured to be <inline-formula> <tex-math notation=LaTeX>$1.67~mu text{s}$ </tex-math></inline-formula>. The power gate-injection HEMT has an ON-resistance <inline-formula> <tex-math notation=LaTeX>${R}_{ mathrm{scriptscriptstyle ON}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation=LaTeX>$18.7~Omega cdot $ </tex-math></inline-formula>mm and a breakdown voltage (BV) of 900 V. These results show the great potential of the developed GaN complementary FET technology in the applications of GaN power modules." @default.
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- W3215281310 date "2022-01-01" @default.
- W3215281310 modified "2023-10-02" @default.
- W3215281310 title "A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs" @default.
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- W3215281310 doi "https://doi.org/10.1109/ted.2021.3126267" @default.
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