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• W3215520171 endingPage "108732" @default.
• W3215520171 startingPage "108732" @default.
• W3215520171 abstract "This study discusses the fabrication of amorphous silicon carbon nitride (a-SiCN) films by ion-beam-assisted deposition (IBAD) and investigates their hardness and frictional properties. The a-SiCN films are deposited by IBAD via electron beam evaporation of graphite and Si under simultaneous nitrogen ion-beam bombardment at acceleration voltages of 0–15 kV. The a-SiCN films are deposited at acceleration voltages of 0, 0.2, 10, and 15 kV. The films are not deposited via nitrogen ion-beam irradiation at 0.5 or 1.0 kV. The a-SiCN films deposited at 0, 0.2 and 15 kV are primarily composed of C. However, the a-SiCN films deposited at 10 kV are primarily composed of Si. The chemical bond of the a-SiCN films, measured via X-ray photoelectron spectroscopic analysis, is dominant in the CC bonds in the C1s spectra. The a-SiCN film deposited at 0 kV demonstrates a hardness value of 19.5 GPa, whereas the a-SiCN films deposited at 0.2, 10 and 15 kV exhibit hardness values in the range of 25–34 GPa. The hardness of the a-SiCN films depended on the ion beam acceleration voltages. The friction coefficient of the a-SiCN film with a high CC bond content against a steel ball is as low as 0.07. In summary, the a-SiCN films deposited with a high-energy ion beam of 15 kV exhibit a high hardness level and a low friction coefficient." @default.
• W3215520171 created "2021-12-06" @default.
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• W3215520171 date "2022-01-01" @default.
• W3215520171 modified "2023-09-24" @default.
• W3215520171 title "Mechanical properties of amorphous SiCN films deposited by ion-beam-assisted deposition" @default.
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• W3215520171 doi "https://doi.org/10.1016/j.diamond.2021.108732" @default.
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