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• W3216355859 abstract "The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed." @default.
• W3216355859 created "2021-12-06" @default.
• W3216355859 creator A5027194790 @default.
• W3216355859 date "1996-01-01" @default.
• W3216355859 modified "2023-10-01" @default.
• W3216355859 title "Status of InP HEMT technology for microwave receiver applications" @default.
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• W3216355859 doi "https://doi.org/10.1109/22.554545" @default.
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