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• W3216514125 abstract "Abstract This paper reviews the 35 years of history of plasma-excited MBE, focusing on the special value added to conventional MBE through the usage of plasma-excited molecular beams. These advantages include low-temperature surface cleaning, low-temperature growth, selective-area regrowth and impurity doping. These technologies are extremely important to realizing nanoscale low-dimensional device structures. True band gap of InN was identified only after high-quality InN became available by using plasma-excited MBE. Future prospects of this technology are also included from the device application viewpoint." @default.
• W3216514125 created "2021-12-06" @default.
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• W3216514125 date "2022-01-01" @default.
• W3216514125 modified "2023-09-26" @default.
• W3216514125 title "Plasma excited molecular beam epitaxy－proposal and achievements through R&D of compound semiconductor materials and devices－" @default.
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• W3216514125 doi "https://doi.org/10.35848/1347-4065/ac3d0c" @default.
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