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- W3216708001 abstract "Indium gallium nitride (InGaN) vertical-cavity surface-emitting lasers (VCSELs) with top dielectric and bottom pipe-gallium nitride (GaN) distributed Bragg reflectors (DBRs) were demonstrated. Pipe-GaN DBR structure consisted of a lateral wet-etched pipe-GaN layer and a GaN layer in the 20 pair stack structure as an embedded reflector. The optical birefringence behavior of the anisotropic pipe-GaN structure induced the polarization properties in the reflectance and electroluminescence (EL) spectra. Polarization EL emission peaks with narrow line-widths were measured at 430.8 nm (perpendicular to pipe-GaN) and 432.5 nm (along with pipe-GaN), respectively. The EL emission peaks with high polarization ratios were observed due to the short resonance cavity effect with the birefringence pipe-GaN DBR structure." @default.
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- W3216708001 date "2022-01-01" @default.
- W3216708001 modified "2023-10-18" @default.
- W3216708001 title "Polarization Properties of InGaN Vertical-Cavity Surface-Emitting Laser With Pipe Distributed Bragg Reflector" @default.
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- W3216708001 doi "https://doi.org/10.1109/ted.2021.3129441" @default.
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