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- W3216781246 abstract "SiC power semiconductor is a good solution for the industrial applications at extremely high temperature. However, due to the limitation of the packaging operating temperature, the high-temperature characteristics of SiC devices are still not well understood. And this problem also limits the application of SiC devices at high temperatures. In this paper, a novel method for static and dynamic characteristics tests at high temperature up to $375^{circ}mathrm{C}$ is proposed. Based on this method, the static performance of a SiC MOSFET is tested by Agilent B1505A. Then, a double pulse test platform is designed and built. Based on this platform, the switching performance is investigated. And several temperature sensitive electrical parameters are analyzed at high temperature $(25^{circ}mathrm{C}-375^{circ}mathrm{C})$ for the first time." @default.
- W3216781246 created "2021-12-06" @default.
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- W3216781246 date "2021-10-10" @default.
- W3216781246 modified "2023-09-29" @default.
- W3216781246 title "Static and Dynamic Characteristics of SiC MOSFET under Extremely High Temperature" @default.
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- W3216781246 doi "https://doi.org/10.1109/ecce47101.2021.9595704" @default.
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