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• W3217509520 abstract "The orthorhombic LaFeO 3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO 3 film deposited at 850 °C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe 0.82 O 3- δ ." @default.
• W3217509520 created "2021-12-06" @default.
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• W3217509520 date "2021-12-01" @default.
• W3217509520 modified "2023-10-18" @default.
• W3217509520 title "Nanostructured LaFeO₃/Si thin films grown by pulsed laser deposition" @default.
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• W3217509520 doi "https://doi.org/10.1051/epjap/2021210195" @default.
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