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- W324284984 abstract "Abstract : The cross-sectional sizes of the regularly-patterned GaN nanorods (NRs) and InGaN/GaN quantum-well (QW) NRs of different heights and different hexagon orientations, which are grown on the patterned templates of different hole diameters, pitches, and crystal orientations, are compared. It is found that the cross-sectional size of the GaN NR, which is formed with the pulsed growth mode, is mainly controlled by the patterned hole diameter, and the thickness of the sidewall QW structure is mainly determined by the NR height. The cross-sectional size variation of GaN NR is interpreted by the quasi-three-dimensional nature of atom supply amount for precipitating a two-dimensional disk-shaped NR segment. The variation of the sidewall QW structure is explained by the condition of constituent atom supply in the gap volume between the neighboring NRs." @default.
- W324284984 created "2016-06-24" @default.
- W324284984 creator A5069775145 @default.
- W324284984 date "2013-08-16" @default.
- W324284984 modified "2023-09-26" @default.
- W324284984 title "Growth of GaN- and ZnO-Based Nanorod Compound Structures" @default.
- W324284984 doi "https://doi.org/10.21236/ada590871" @default.
- W324284984 hasPublicationYear "2013" @default.
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