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- W32882832 abstract "A laboratory procedure for zone recrystallization with a temperature gradient is developed for gallium arsenide, using discrete zones, which permit linear and point zones 20-200 /sup +/m in diameter to move stably in the temperature range 820-1050/sup 0/C. The dependences of the rate of movement of the discrete zones on their thickness and temperatures are determined, which are explained by theories for systems with volatile components. The dislocation density in the recrystallized regions is not higher than in the substrate. Current-voltage characteristics of the p-n junctions, formed on the boundary of the channels with the starting materials, have high parameters. A gallium zone enables purifying the material effectively from tin (by 2-3 orders of magnitude) and to create structures which have the Gunn effect. Doping with silicon from a linear zone gives rise to the possibility of forming multilayer structures due to poorly defined dependence of the inversion temperature of the conductivity type on the crystal orientation of the growing surface." @default.
- W32882832 created "2016-06-24" @default.
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- W32882832 date "1987-07-01" @default.
- W32882832 modified "2023-09-24" @default.
- W32882832 title "Zone recrystallization of gallium arsenide with discrete zones in a temperature gradient" @default.
- W32882832 hasPublicationYear "1987" @default.
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