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- W329565745 abstract "Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field." @default.
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- W329565745 date "2010-01-01" @default.
- W329565745 modified "2023-10-02" @default.
- W329565745 title "Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures" @default.
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