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- W330270532 abstract "Incorporation of arsenic irradiated on GaSb and antimony irradiated on GaAs is comparatively investigated by XPS and CAICISS to obtain a guiding principle in fabricating atomically abrupt interfaces in a heterostructure consisting of an antimony-compound semiconductor and an arsenic-compound semiconductor. Experimental results reveal that arsenic on GaSb significantly penetrates GaSb substituting for antimony at irradiation temperatures higher than 400°C, while it mainly desorbs at 400°C and below. On the other hand, antimony mainly desorbs at 200°C and above, while it mainly deposits on GaAs below 200°C. It is thought that the difference in the behavior of arsenic and antimony arises from the differing bonding strength between Ga-As and Ga-Sb. The atomic substitution mechanism in the As/GaSb system is also discussed." @default.
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- W330270532 date "1994-01-01" @default.
- W330270532 modified "2023-09-26" @default.
- W330270532 title "Atomic incorporation difference between arsenic into GaSb and antimony into GaAs" @default.
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- W330270532 doi "https://doi.org/10.1016/b978-0-444-81889-8.50089-4" @default.
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