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- W3309715 abstract "We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low as ρ ≈ 10-7 Ω cm2. Our devices show a strongly diameter-dependent breakdown voltage at reverse bias, which we explain in terms of the influence of the surrounding dielectric. We suggest that this technology is suitable for incorporating nanowire-based functionalities into future integrated circuits." @default.
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- W3309715 date "2007-03-10" @default.
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- W3309715 title "Breakdown Enhancement in Silicon Nanowire <i>p-n</i> Junctions" @default.
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- W3309715 doi "https://doi.org/10.1021/nl062681n" @default.
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