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- W341888891 abstract "From chemical compositional analysis, it is surmised that in indium doped CdTe films cadmium vacancies do occur causing possibly deep level acceptor states to be present in the material. By sputtering at a cadmium overpressure, it was possible to compensate for these vacancies and thus improve the device quality significantly. Extensive temperature dependent measurements of dark and illuminated I/V characteristics of gold metallized Schottky barrier diodes based on these improved and reproducible films have been made. Barrier height of 723 MeV and the thermionic emission coefficient of 19 A/cm/sup 2/ /sup 0/K/sup 2/ have been calculated. Characteristics showing I/sub sc/ and V/sub oc/ at different temperatures and different illumination level are presented." @default.
- W341888891 created "2016-06-24" @default.
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- W341888891 date "1981-05-15" @default.
- W341888891 modified "2023-09-27" @default.
- W341888891 title "Controlled cadmium telluride thin films for solar-cell applications. Third quarterly report, December 1, 1980-February 1, 1981" @default.
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