Matches in SemOpenAlex for { <https://semopenalex.org/work/W344308213> ?p ?o ?g. }
Showing items 1 to 85 of
85
with 100 items per page.
- W344308213 abstract "Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V." @default.
- W344308213 created "2016-06-24" @default.
- W344308213 creator A5000858808 @default.
- W344308213 creator A5077990959 @default.
- W344308213 creator A5080852459 @default.
- W344308213 date "1995-08-01" @default.
- W344308213 modified "2023-09-27" @default.
- W344308213 title "Photoelectrochemical etching of silicon carbide (SiC) and its characterization" @default.
- W344308213 hasPublicationYear "1995" @default.
- W344308213 type Work @default.
- W344308213 sameAs 344308213 @default.
- W344308213 citedByCount "0" @default.
- W344308213 crossrefType "journal-article" @default.
- W344308213 hasAuthorship W344308213A5000858808 @default.
- W344308213 hasAuthorship W344308213A5077990959 @default.
- W344308213 hasAuthorship W344308213A5080852459 @default.
- W344308213 hasConcept C100460472 @default.
- W344308213 hasConcept C108225325 @default.
- W344308213 hasConcept C120665830 @default.
- W344308213 hasConcept C121332964 @default.
- W344308213 hasConcept C1291036 @default.
- W344308213 hasConcept C136525101 @default.
- W344308213 hasConcept C142724271 @default.
- W344308213 hasConcept C159985019 @default.
- W344308213 hasConcept C171250308 @default.
- W344308213 hasConcept C171635847 @default.
- W344308213 hasConcept C189278905 @default.
- W344308213 hasConcept C192562407 @default.
- W344308213 hasConcept C201999631 @default.
- W344308213 hasConcept C204787440 @default.
- W344308213 hasConcept C2776798109 @default.
- W344308213 hasConcept C2779227376 @default.
- W344308213 hasConcept C2780722187 @default.
- W344308213 hasConcept C49040817 @default.
- W344308213 hasConcept C5335593 @default.
- W344308213 hasConcept C544956773 @default.
- W344308213 hasConcept C71924100 @default.
- W344308213 hasConceptScore W344308213C100460472 @default.
- W344308213 hasConceptScore W344308213C108225325 @default.
- W344308213 hasConceptScore W344308213C120665830 @default.
- W344308213 hasConceptScore W344308213C121332964 @default.
- W344308213 hasConceptScore W344308213C1291036 @default.
- W344308213 hasConceptScore W344308213C136525101 @default.
- W344308213 hasConceptScore W344308213C142724271 @default.
- W344308213 hasConceptScore W344308213C159985019 @default.
- W344308213 hasConceptScore W344308213C171250308 @default.
- W344308213 hasConceptScore W344308213C171635847 @default.
- W344308213 hasConceptScore W344308213C189278905 @default.
- W344308213 hasConceptScore W344308213C192562407 @default.
- W344308213 hasConceptScore W344308213C201999631 @default.
- W344308213 hasConceptScore W344308213C204787440 @default.
- W344308213 hasConceptScore W344308213C2776798109 @default.
- W344308213 hasConceptScore W344308213C2779227376 @default.
- W344308213 hasConceptScore W344308213C2780722187 @default.
- W344308213 hasConceptScore W344308213C49040817 @default.
- W344308213 hasConceptScore W344308213C5335593 @default.
- W344308213 hasConceptScore W344308213C544956773 @default.
- W344308213 hasConceptScore W344308213C71924100 @default.
- W344308213 hasLocation W3443082131 @default.
- W344308213 hasOpenAccess W344308213 @default.
- W344308213 hasPrimaryLocation W3443082131 @default.
- W344308213 hasRelatedWork W1539017552 @default.
- W344308213 hasRelatedWork W1631054038 @default.
- W344308213 hasRelatedWork W1981547039 @default.
- W344308213 hasRelatedWork W1999059145 @default.
- W344308213 hasRelatedWork W2012729690 @default.
- W344308213 hasRelatedWork W2026258831 @default.
- W344308213 hasRelatedWork W2047851816 @default.
- W344308213 hasRelatedWork W2051287313 @default.
- W344308213 hasRelatedWork W2055277201 @default.
- W344308213 hasRelatedWork W2128826002 @default.
- W344308213 hasRelatedWork W2130582206 @default.
- W344308213 hasRelatedWork W2326630033 @default.
- W344308213 hasRelatedWork W2333328929 @default.
- W344308213 hasRelatedWork W2796806195 @default.
- W344308213 hasRelatedWork W2912446180 @default.
- W344308213 hasRelatedWork W3022735460 @default.
- W344308213 hasRelatedWork W3106860134 @default.
- W344308213 hasRelatedWork W3130663605 @default.
- W344308213 hasRelatedWork W843696120 @default.
- W344308213 hasRelatedWork W1933166154 @default.
- W344308213 isParatext "false" @default.
- W344308213 isRetracted "false" @default.
- W344308213 magId "344308213" @default.
- W344308213 workType "article" @default.