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• W346579796 abstract "The first quarter of work on the contract is summarized. The metallorganic chemical vapor deposition (MO-CVD) technique is being applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMA) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures in the range approximately 550-850/sup 0/C, to produce the desired film composition and properties. Ten candidate substrate materials have been selected for further experimental investigation, based on a set of qualification criteria and initial experimental tests. To date, only minor differences have been observed in the properties of undoped polycrystalline GaAs films grown on various candidate substrates-including Corning Codes 0317 and 1723 glasses, polycrystalline alumina ceramics ASM805 and ASM838 (from 3M Company), and Mo sheet-with the exception of films deposited on Kovar-type Fe-Ni-Co alloys. Attack of these alloys by AsH/sub 3/ has been observed at temperatures above 500/sup 0/C, with resulting formation of an interface compound and Ni-rich inclusions in the deposited GaAs films. Films on all of the other substrates have typically had growth characteristics in common, with apparent surface grain sizes in the 2-5 ..mu..m range and high electrical resistivity (greater than or equal to 10/sup 5/ ohm-cm), with no evidence of chemical reaction with the film or the reactants under the conditions of growth employed. Large-grain (10-20 ..mu..m) growth of Ge films on Kovar-type alloy surfaces has also been achieved by GeH/sub 4/ pyrolysis indicating considerable promise for this composite as a substrate for subsequent GaAs film growth." @default.
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• W346579796 date "1976-11-01" @default.
• W346579796 modified "2023-09-24" @default.
• W346579796 title "Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, July 5--October 2, 1976" @default.
• W346579796 doi "https://doi.org/10.2172/7318140" @default.
• W346579796 hasPublicationYear "1976" @default.
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