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- W346603105 abstract "The techniques of Molecular Beam Epitaxy and MOCVD allow for the epitaxial deposition of Silicon, Gallium Arsenide and other related ternary compounds at sufficiently low temperatures that donor and acceptor impurities when incorporated do not diffuse significantly. In addition, the introduction of these impurities can be controlled with sufficient accuracy and speed that single atomic planes of dopant can be deposited. The use of such 'planes' of dopant in semiconductor device structures has been significant over the last few years, with applications being suggested for new majority carrier rectifying structures^) transistors^) balanced mixersW and regenerative switching devices^)." @default.
- W346603105 created "2016-06-24" @default.
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- W346603105 date "2007-01-01" @default.
- W346603105 modified "2023-09-26" @default.
- W346603105 title "SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 3 Edited by G. Bac.carani, M. Rudan - Bologna (Italy) September 26-28,1988 - Tecnoprini THE SIMULATION OF FETs CONTAINING SINGLE AND MULTIPLE PLANES OF DOPANT ATOMS" @default.
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