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- W35447480 abstract "Over 30 years after ion implantation was first used in integrated circuit technology, exciting developments have taken place both in equipment development and process development. These developments have been critical to the introduction of 0.25 micron technology. Current developments are making it possible to meet requirements deeper into the submicron regime. Commercial ion implantation has been extended into the MeV range on the one hand and into the sub keV range on the other. High energy applications include deep retrograde wells, buried layers for latch-up immunity, gettering, and deep n-wells for memory devices. Low energy applications include ultra-shallow junctions. The challenges of predicting implant profiles and understanding annealing behavior are still strong, yet many years of knowledge provide a firm basis upon which to build. The development of newer equipment has also kept pace with stringent requirements placed on cleanliness and uniformity of implant." @default.
- W35447480 created "2016-06-24" @default.
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- W35447480 date "1999-01-01" @default.
- W35447480 modified "2023-09-26" @default.
- W35447480 title "Ion implantation requirements for deep submicron technology" @default.
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- W35447480 doi "https://doi.org/10.1063/1.59046" @default.
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