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- W36405150 endingPage "504" @default.
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- W36405150 abstract "This chapter discusses that silicon, the mainstay of VLSI technology, owes its predominance to its processing simplicity. However, its elemental nature precludes the elegant sophistication of band-engineered device design that is common in the compound semiconductor material systems. In addition to strain, heteroepitaxy of alloys has to contend with morphological instabilities that arise due to differences in surface energy between the two materials. The early efforts were plagued by poor surface morphology due to three-dimensional growth and limited Ge content in the films primarily because of the relatively high temperature employed for growth. The chapter reiterates that the relative intensities of the Ge–Ge and Ge–Si lines in Si–Ge alloys are a sensitive probe of the alloy composition and the degree of intermixing in a Ge layer imbedded in bulk Si. Electron Beam Induced Currents (EBIC) measurements have been used to image dislocations because of the increased carrier recombination in the vicinity of the dislocation. Experimental verification of concepts has been inconclusive since dislocation-related luminescence often occurs in the same wavelength regime, and definitive results suggesting the existence of a direct bandgap in Si/Ge superlattices continue to be sought after." @default.
- W36405150 created "2016-06-24" @default.
- W36405150 creator A5089240469 @default.
- W36405150 creator A5091022757 @default.
- W36405150 date "1995-01-01" @default.
- W36405150 modified "2023-10-16" @default.
- W36405150 title "Elemental Semiconductor Heterostructures—Growth, Properties, and Applications" @default.
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