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- W36612466 abstract "We report on the interface control process for the growth of high-quality ZnO(0001) film on Si(111) substrate. By using in situ reflective high-energy electron diffraction combined with ex situ high-resolution transmission electron microscopy and selective area electron diffraction, it was revealed that high-quality Mg film can be obtained on Si(111)-7×7 at low temperature (0℃) in which the mutual diffusion of Mg and Si had been completely suppressed. Then, a well-defined MgO layer was formed by the oxidation of the Mg film and MgO homoepitaxy at low temperature. The high-quality Mg film effectively protected Si from oxidation. Meanwhile, the MgO layer not only provided an excellent template for the nuclei of ZnO, but also greatly relieved the residual strain in the ZnO film caused by the huge lattice mismatch between ZnO and Si. The low-temperature interface control technique can also be applied to control other reactive metal/Si interfaces and obtain high-quality oxide templates accordingly." @default.
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- W36612466 date "2007-01-01" @default.
- W36612466 modified "2023-09-26" @default.
- W36612466 title "Interface Control for Epitaxial Growth of High-quality Zn0(0001Film on Si(111)Substrate" @default.
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