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• W3717811 abstract "This research offers insights on the function of a home-built plasma enhancedchemical vapor deposition (PECVD) system in the preparation of silicon carbide (SiC)thin films. The work started with designing and building a reaction chamber for thePECVD system that would utilize radio frequency (RF), direct current (DC) and hotwire(HW). The first phase of the work ensured that the PECVD system is capable ofproducing good quality and reproducible silicon carbide thin films via independentdeposition techniques namely RF-PECVD, DC-PECVD and HW-CVD. The effects ofmethane to silane gas flow rate ratio on the deposition rate, optical energy gap, Si-C andSi-H bonding configurations and formation of any crystalline structures wereinvestigated. Analytical study revolved around the results obtained from Opticaltransmission spectroscopy, Fourier transform infrared (FTIR) spectroscopy, micro-Raman scattering spectroscopy and X-Ray diffraction spectroscopy. Based on thefindings from the first phase of the work, the research was then proceeded to the nextphase of the work where a hybrid deposition technique comprising DC-PECVD andHW-CVD was introduced and applied. The study for these films involved the effects ofapplied DC voltage and the role of hydrogen in the growth and deposition process ofsilicon carbide thin films. Results of this work demonstrated that the optical energyband gap of the silicon carbide films prepared by all techniques could be increased byincreasing the methane to silane gas flow rate ratio. These results were consistent withpublished results and the variation of the properties of the films was consistent with thedeposition kinetics of silicon carbide. The system is tunable to produce silicon carbidefilms with a wide range of optical energy band gap from 1.63 eV to 3.26 eV. The filmdeposition rate is affected in contrary manners for different techniques and does notshow direct effect on carbon incorporation nor crystallization of the film. However, bythe multiple ranges of deposition parameters allowed by the system built in this work, avariety of silicon carbide thin film could be produced. RF-PECVD technique providessilicon rich amorphous silicon carbide films with deliberately high optical energy bandgap. DC-PECVD technique displayed low deposition rate as compared to the othertechniques but produces silicon carbide films with relatively high optical energy bandgap and more ordered structure with traces of silicon nanocrystallites. Silicon carbidefilms prepared by HW-CVD technique exhibit enhanced properties such as increasingvalue of optical energy band gap and more amorphous structure with increased methaneto silane gas flow rate ratio. The new HW-PECVD technique demonstrated in thissystem has succeeded in preparing silicon carbide thin films and provided a minimumoptical energy band gap of 2.05 eV. The optical energy band gap could be increased byapplying lower DC voltage. The new deposition system is also made feasible tohydrogen applications. It was observed that nanocrystallite structures were formed andwere embedded in amorphous SiC film matrix with longer hydrogen surface treatmenttime." @default.
• W3717811 created "2016-06-24" @default.
• W3717811 creator A5057737769 @default.
• W3717811 date "2012-01-01" @default.
• W3717811 modified "2023-09-27" @default.
• W3717811 title "Hot-wire plasma enhanced chemical vapour deposition system for preparation of silicon carbide thin films / Aniszawati Azis" @default.
• W3717811 hasPublicationYear "2012" @default.
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