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- W37309488 abstract "In this chapter a background and overview of developments in the principal technological R&D and production processes for gallium arsenide (GaAs) devices is provided. The main focus is on the most important enabling technology for the production of the present and the future generations of microelectronic devices." @default.
- W37309488 created "2016-06-24" @default.
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- W37309488 date "2000-01-01" @default.
- W37309488 modified "2023-09-24" @default.
- W37309488 title "Gallium Arsenide Crystal Growth" @default.
- W37309488 doi "https://doi.org/10.1016/b978-185617364-3/50007-8" @default.
- W37309488 hasPublicationYear "2000" @default.
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