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- W376558584 abstract "Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favoured materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This conference was held in the very first year of the 21st century; an era in which SiC devices are finding a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference. These volumes contain 351 papers, 20 of which were invited. The principal topics are organized under the chapter headings: 1) surveys, 2) SiC bulk growth, 3) SiC epitaxial growth (homoepitaxy and heteroepitaxy), 4) physical properties of SiC (structure, defects, optical and electrical properties, surfaces and interfaces, and nanostructures), 5) processing of SiC (implantation, contacts, oxides), 6) SiC devices (diodes, power transistors, high-frequency devices, and sensors), and 7) III-Nitrides (growth, characterization, and devices). The papers reflect the atmosphere of the conference, and should provide many lines of enquiry for those working, or intending to work, in this field." @default.
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- W376558584 date "2002-01-01" @default.
- W376558584 modified "2023-09-23" @default.
- W376558584 title "Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001" @default.
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