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- W404186360 abstract "The structural and electrical properties of polycrystalline Si 0.5 Ge 0.5 films 150 nm thick grown by molecular beam deposition at temperatures of 200-550 ° C on silicon substrates coated with amorphous layers of silicon oxynitride were studied. It is shown that the films consist of a mixture of amorphous and polycrystal- line phases. The amorphous phase fraction decreases from ~50% in films deposited at 200 ° C to zero in films grown at 550 ° C. Subsequent 1-h annealing at a temperature of 550 ° C results in complete solid-phase crystalli- zation of all films. The electron transport of charge carriers in polycrystalline films occurs by the thermally acti- vated mechanism associated with the energy barrier of ~0.2 eV at grain boundaries. Barrier lowering upon addi- tional annealing of SiGe films correlates with an increase in the average grain size." @default.
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- W404186360 date "2007-01-01" @default.
- W404186360 modified "2023-09-23" @default.
- W404186360 title "AMORPHOUS, VITREOUS, POROUS, ORGANIC, AND MICROCRYSTALLINE SEMICONDUCTORS; SEMICONDUCTOR COMPOSITES Structure and Electrical Properties of Polycrystalline SiGe Films Grown by Molecular Beam Deposition" @default.
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