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- W408182344 abstract "The growth of epitaxial graphene was performed on the Si-face of 4H-SiC, 6H-SiC and 3C-SiC substrates by Si sublimation of SiC in Ar atmosphere at a temperature of 2000oC. Graphene surface morpholo ..." @default.
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- W408182344 date "2012-01-01" @default.
- W408182344 modified "2023-09-27" @default.
- W408182344 title "Growth of quality graphene on cubic silicon carbide" @default.
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