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• W4200011672 abstract "The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study, and device fabrication including normally off solutions like Cascode, trench MIS-gate, and p-GaN gate. Device reliability and other common fabrication issues in GaN high electron mobility transistors (HEMTs) are also discussed. Lastly, we give an outlook on the GaN-on-Si power devices from two aspects, namely high frequency, and high power GaN ICs, and GaN vertical power devices." @default.
• W4200011672 created "2021-12-31" @default.
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• W4200011672 date "2022-05-01" @default.
• W4200011672 modified "2023-10-09" @default.
• W4200011672 title "A review on the GaN-on-Si power electronic devices" @default.
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• W4200011672 doi "https://doi.org/10.1016/j.fmre.2021.11.028" @default.
• W4200011672 hasPublicationYear "2022" @default.
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