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• W4200043786 abstract "Cu2ZnSn(S,Se)4 (CZTSSe) has generated considerable research interest owing to its composition of abundant elements and excellent light-absorption properties. However, CZTSSe thin-film solar cells suffer from a considerable deficit in the open-circuit voltage (VOC), which is mainly due to the severe interfacial recombination induced by the rough surface of CZTSSe and numerous physical defects. In this study, to improve the morphology and reduce the interfacial recombination, an In2S3 passivation layer was introduced between the CZTSSe and CdS layers via a chemical bath deposition process, and the effects of the In2S3 layer on the device performance were systematically examined by performing various electrodynamic analyses. The CZTSSe solar cells with thin In2S3 layers exhibited impressive increases in VOC and conversion efficiency (from 7.33 to 9.24 %), due to the suppression of physical defects and the refined surface morphology resulting from filling the voids and pinholes. In addition, the nanoscale roughness of the In2S3/CZTSSe surface increased the number of nucleation sites for the CdS nuclei, which may reduce the activation energy of the heterogeneous nucleation. The presence of In2S3 layer resulted in uniform growth of CdS without macroscopic CdS agglomerates (i. e., reduced roughness of full devices), which improved the quality of the interface. These findings confirmed that the reduction of physical defects and the improved deposition of the CdS layer enabled by the added In2S3 passivation layer improved the device performance." @default.
• W4200043786 created "2021-12-31" @default.
• W4200043786 creator A5014489763 @default.
• W4200043786 creator A5020077526 @default.
• W4200043786 creator A5062071958 @default.
• W4200043786 creator A5075878194 @default.
• W4200043786 date "2022-01-27" @default.
• W4200043786 modified "2023-09-27" @default.
• W4200043786 title "A Thin In ₂ S ₃ Interfacial Layer for Reducing Defects and Roughness of Cu ₂ ZnSn(S,Se) ₄ Thin‐Film Solar Cells" @default.
• W4200043786 cites W1763476374 @default.
• W4200043786 cites W1967844552 @default.
• W4200043786 cites W1979583260 @default.
• W4200043786 cites W1985157357 @default.
• W4200043786 cites W1987797142 @default.
• W4200043786 cites W1998262740 @default.
• W4200043786 cites W2018501598 @default.
• W4200043786 cites W2036951748 @default.
• W4200043786 cites W2041440823 @default.
• W4200043786 cites W2075539112 @default.
• W4200043786 cites W2087287264 @default.
• W4200043786 cites W2154055054 @default.
• W4200043786 cites W2161605458 @default.
• W4200043786 cites W2252367360 @default.
• W4200043786 cites W2253204042 @default.
• W4200043786 cites W2279870199 @default.
• W4200043786 cites W2295213035 @default.
• W4200043786 cites W2319348648 @default.
• W4200043786 cites W2335841662 @default.
• W4200043786 cites W2340005653 @default.
• W4200043786 cites W2344113806 @default.
• W4200043786 cites W246578785 @default.
• W4200043786 cites W2551727121 @default.
• W4200043786 cites W2560427527 @default.
• W4200043786 cites W2563324081 @default.
• W4200043786 cites W2623247744 @default.
• W4200043786 cites W2794402232 @default.
• W4200043786 cites W2794640910 @default.
• W4200043786 cites W2796179426 @default.
• W4200043786 cites W2801228296 @default.
• W4200043786 cites W2883169032 @default.
• W4200043786 cites W2883637125 @default.
• W4200043786 cites W2889106113 @default.
• W4200043786 cites W2897910305 @default.
• W4200043786 cites W2916438865 @default.
• W4200043786 cites W2947741981 @default.
• W4200043786 cites W2949100025 @default.
• W4200043786 cites W2974516990 @default.
• W4200043786 cites W3000167320 @default.
• W4200043786 cites W3002189835 @default.
• W4200043786 cites W3024712896 @default.
• W4200043786 cites W3080446914 @default.
• W4200043786 cites W3092674974 @default.
• W4200043786 cites W3128638816 @default.
• W4200043786 cites W3135557703 @default.
• W4200043786 doi "https://doi.org/10.1002/cssc.202102350" @default.
• W4200043786 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/34939335" @default.
• W4200043786 hasPublicationYear "2022" @default.
• W4200043786 type Work @default.
• W4200043786 citedByCount "3" @default.
• W4200043786 countsByYear W42000437862022 @default.
• W4200043786 countsByYear W42000437862023 @default.
• W4200043786 crossrefType "journal-article" @default.
• W4200043786 hasAuthorship W4200043786A5014489763 @default.
• W4200043786 hasAuthorship W4200043786A5020077526 @default.
• W4200043786 hasAuthorship W4200043786A5062071958 @default.
• W4200043786 hasAuthorship W4200043786A5075878194 @default.
• W4200043786 hasConcept C107365816 @default.
• W4200043786 hasConcept C127413603 @default.
• W4200043786 hasConcept C151730666 @default.
• W4200043786 hasConcept C159985019 @default.
• W4200043786 hasConcept C171250308 @default.
• W4200043786 hasConcept C178790620 @default.
• W4200043786 hasConcept C185592680 @default.
• W4200043786 hasConcept C19067145 @default.
• W4200043786 hasConcept C192562407 @default.
• W4200043786 hasConcept C206991015 @default.
• W4200043786 hasConcept C2779227376 @default.
• W4200043786 hasConcept C2816523 @default.
• W4200043786 hasConcept C33574316 @default.
• W4200043786 hasConcept C42360764 @default.
• W4200043786 hasConcept C49040817 @default.
• W4200043786 hasConcept C61048295 @default.
• W4200043786 hasConcept C64297162 @default.
• W4200043786 hasConcept C71039073 @default.
• W4200043786 hasConcept C86803240 @default.
• W4200043786 hasConceptScore W4200043786C107365816 @default.
• W4200043786 hasConceptScore W4200043786C127413603 @default.
• W4200043786 hasConceptScore W4200043786C151730666 @default.
• W4200043786 hasConceptScore W4200043786C159985019 @default.
• W4200043786 hasConceptScore W4200043786C171250308 @default.
• W4200043786 hasConceptScore W4200043786C178790620 @default.
• W4200043786 hasConceptScore W4200043786C185592680 @default.
• W4200043786 hasConceptScore W4200043786C19067145 @default.
• W4200043786 hasConceptScore W4200043786C192562407 @default.
• W4200043786 hasConceptScore W4200043786C206991015 @default.
• W4200043786 hasConceptScore W4200043786C2779227376 @default.
• W4200043786 hasConceptScore W4200043786C2816523 @default.
• W4200043786 hasConceptScore W4200043786C33574316 @default.
• W4200043786 hasConceptScore W4200043786C42360764 @default.
• W4200043786 hasConceptScore W4200043786C49040817 @default.

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