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• W4200053310 abstract "Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we report on the manufacturing facility, epitaxial growth on both 100-mm sapphire and 100-mm SiC, and device electrical performance. Results show good material quality, a low 2DEG sheet resistance with good non-uniformity, and good dynamic behavior with no current dispersion at 60 V at both room temperature and high temperature (150°C)." @default.
• W4200053310 created "2021-12-31" @default.
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• W4200053310 date "2021-11-07" @default.
• W4200053310 modified "2023-10-11" @default.
• W4200053310 title "Commercially Available N-polar GaN HEMT Epitaxy for RF Applications" @default.
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• W4200053310 doi "https://doi.org/10.1109/wipda49284.2021.9645102" @default.
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