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- W4200206004 abstract "The basics of dopant-free materials used as carrier-selective layers at the surfaces and interfaces in c-Si or poly-Si solar cells have been reviewed. Emphasis has been given to the discussion of a host of transition metal oxides (TMOs) having wide range of band structures and which have the carrier selective property of allowing only one type of carrier (electron or hole) to flow across their junctions with Si. The fabrication process of these materials are benign and at low temperatures which make them gradually attractive over the doped Si layers which need toxic materials and/or high temperatures for their formation. Silicon solar cells having dopant-free carrier selective TMOs fabricated by various groups using different fabrication processes and different contact configurations (Full area contacts, Partial area contacts or Interdigitated back contacts) have been reviewed and presented alongwith their photovoltaic performance. Different passivation schemes (full area or partial area) that could be used alongwith these dopant-free carrier selective materials have also been discussed." @default.
- W4200206004 created "2021-12-31" @default.
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- W4200206004 creator A5085107169 @default.
- W4200206004 date "2022-02-01" @default.
- W4200206004 modified "2023-10-12" @default.
- W4200206004 title "Dopant-free materials for carrier-selective passivating contact solar cells: A review" @default.
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