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• W4200235556 abstract "Abstract Field‐effect transistors (FETs) are the main building block of microelectronic devices. For most of the FETs, the conduction channel relies on either n‐type or p‐type semiconductor materials. Recent advances in 2D materials offer an opportunity to form van der Waals heterojunction‐based FETs with novel electrical performance. Here, a MoS 2 /WSe 2 heterojunction–channel FET using h‐BN as insulating layer and Cr/Au metal as the gate, is demonstrated. Two asymmetric Schottky contacts are formed at both sides of MoS 2 , WSe 2 due to electron tunneling effects, work function differences, and Fermi level pinning. Benefiting from that, the authors observe a forward current regulating diode behavior, where the drain current remains unchanged regardless of the drain voltage ( V DS ) fluctuations and can be modulated by the gate voltage, atmosphere temperature, vacuum pressure, and h‐BN layer thickness. In addition, under higher V DS , heterojunction–channel breakdown induced by the Fowler–Nordheim (F–N) tunneling at the WSe 2 /h‐BN/metal region, is observed. Furthermore, the transistor demonstrates a reverse rectification behavior with onset voltage linearly depending on the temperature (3 mV T −1 ). This work paves the way for the potential application of heterojunction–channel FETs for high‐performance current regulator and current rectifier." @default.
• W4200235556 created "2021-12-31" @default.
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• W4200235556 date "2021-12-29" @default.
• W4200235556 modified "2023-10-16" @default.
• W4200235556 title "Tunable Current Regulative Diode Based on Van der Waals Stacked MoS ₂ /WSe ₂ Heterojunction–Channel Field‐Effect Transistor" @default.
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• W4200235556 doi "https://doi.org/10.1002/aelm.202100869" @default.
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