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• W4200265444 abstract "High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is to protect the Schottky barrier from the high electric field, which is challenging by employing conventional field plate structures due to their large pinch-off voltage. In this work, we propose a simple AlGaN/GaN SBD architecture based on a p-GaN cap layer to achieve excellent off-state performance with a very low leakage current. By properly designing the AlGaN barrier and p-GaN cap, the pinch off-voltage of the p-GaN field plate is carefully controlled and the voltage drop over the Schottky junction is effectively reduced. In addition, a large carrier concentration in the access region is achieved, leading to a reduced sheet resistance. This results in good on-state performance along with a very low leakage current of ∼1 nA/mm at 400 V, which is maintained well below 100 nA/mm up to elevated temperatures of 150 °C. Moreover, the proposed architecture shares the well-established fabrication process of commercial p-GaN HEMTs and, thus, represents a promising and viable solution for future GaN diodes." @default.
• W4200265444 created "2021-12-31" @default.
• W4200265444 creator A5070490610 @default.
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• W4200265444 date "2021-12-27" @default.
• W4200265444 modified "2023-10-14" @default.
• W4200265444 title "<i>p</i>-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes" @default.
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• W4200265444 doi "https://doi.org/10.1063/5.0074543" @default.
• W4200265444 hasPublicationYear "2021" @default.
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