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• W4200313587 abstract "• The Al 2 O 3 films were deposited on (α-, ε-)Ga 2 O 3 films by ALD with H 2 O, O 3 , O 2 plasma. • The (α-, ε-)Ga 2 O 3 films were epitaxially grown on α-Al 2 O 3 by Mist-CVD and PLD. • The energy band diagrams of Al 2 O 3 /(α-,ε-)Ga 2 O 3 were studied utilizing the XPS. • The ΔE C of Al 2 O 3 /(α-, ε-)Ga 2 O 3 with different oxygen precursors are compared. Al 2 O 3 films were deposited on α- and ε-Ga 2 O 3 films by atomic layer deposition (ALD) in different plasma oxygen source (H 2 O, O 3 , O 2 plasma). The α- and ε-Ga 2 O 3 films were epitaxially grown on sapphire substrates by mist chemical vapor deposition (Mist-CVD) and pulsed laser deposition (PLD), respectively. The epilayer characteristics were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscope (AFM) and high resolution transmission electron microscopy (HRTEM). Furthermore, the energy band diagrams of Al 2 O 3 /α-Ga 2 O 3 and Al 2 O 3 /ε-Ga 2 O 3 were investigated by X-ray photoelectron spectroscopy (XPS). On the basis of Ga 3 d and Al 2 p core-level spectra as well as α- and ε-Ga 2 O 3 valence band spectra, the energy band diagrams of Al 2 O 3 /α-Ga 2 O 3 and Al 2 O 3 /ε-Ga 2 O 3 interface were determined. And the conduction band offset of Al 2 O 3 /α-Ga 2 O 3 interfaces were estimated to be 1.21/1.31/1.27 eV for oxidant of H 2 O, O 3 and O 2 plasma, respectively, while that of Al 2 O 3 /ε-Ga 2 O 3 were 1.61/1.72/1.7 eV, the conduction band offsets of Al 2 O 3 grown by O 3 and O 2 plasma were higher than those grown by H 2 O. And, the conduction band offsets of all samples were greater than 1 eV, indicating that Al 2 O 3 grown by ALD can be used as gate dielectric in (α-, ε-) Ga 2 O 3 power device." @default.
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• W4200313587 date "2022-02-01" @default.
• W4200313587 modified "2023-10-14" @default.
• W4200313587 title "Impacts of oxygen source on band alignment of ALD Al2O3/(α-, ε-)Ga2O3 interface" @default.
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• W4200313587 doi "https://doi.org/10.1016/j.jcrysgro.2021.126462" @default.
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